Semiconductor Device

ABSTRACT

Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion ( 2 ) formed on the upper surface of a semiconductor substrate ( 1 ), a passivation layer ( 3 ) so formed on the upper surface of the semiconductor substrate ( 1 ) as to overlap a part of the electrode pad portion ( 2 ) and having a first opening portion ( 3   a ) where the upper surface of the electrode pad portion ( 2 ) is exposed, a barrier metal layer ( 5 ) formed on the electrode pad portion ( 2 ), and a solder bump ( 6 ) formed on the barrier metal layer ( 5 ). The barrier metal layer ( 5 ) is formed such that an outer peripheral end ( 5   b ) lies within the first opening portion ( 3   a ) of the passivation layer ( 3 ) when viewed in plan.

TECHNICAL FIELD

The present invention relates to a semiconductor device in which asemiconductor chip is bonded by on a flip chip basis.

BACKGROUND ART

There are conventionally known semiconductor packages (semiconductordevices) in which a semiconductor chip is bonded by flip chip bonding. Asemiconductor chip to be mounted in such a semiconductor package hassolder bumps (bump electrodes) formed on it to allow flip chip bonding(for example, see Patent Document 1 listed below).

FIGS. 29 to 31 are schematic sectional views showing the structure of aconventional semiconductor device disclosed in Patent Document 1. In theconventional semiconductor device, as shown in FIG. 29, an electrode padportion 1002 is formed on the top face of a semiconductor substrate1001. It should be understood that on the top face of the semiconductorsubstrate 1001, a circuit (unillustrated) such as an IC or LSI has beenfabricated. Moreover, on the top face of the semiconductor substrate, aprotection layer 1003 for protecting the top face of the semiconductorsubstrate 1001 is formed. The protection layer 1003 has an opening 1003a through which a predetermined region on the electrode pad portion 1002is exposed. Moreover, the protection layer 1003 is so formed as tooverlap a peripheral part of the electrode pad portion 1002, with theresult that the protection layer 1003 has a step part 1003 b formed init.

Moreover on the electrode pad portion 1002, via a barrier metal layer1004, a bump electrode 1005 is formed. The barrier metal layer 1004 isformed on the electrode pad portion 1002 such that a peripheral part1004 a of the barrier metal layer 1004 rests on a region of theprotection layer 1003 overlapping the electrode pad portion 1002. Thatis, a circumferential end part 1004 b of the barrier metal layer 1004 isformed on the region of the protection layer 1003 overlapping theelectrode pad portion 1002.

Moreover, as shown in FIG. 30, the semiconductor substrate 1001 havingthe bump electrode 1005 formed on it is arranged face down above aprinted circuit board 1006—in such a way that the top face (circuitface) of the semiconductor substrate 1001 faces the printed circuitboard 1006—, and is connected by the bump electrode 1005 to an electrode1007 on the printed circuit board 1006 on a flip chip basis.

Patent Document 1: JP-A-2007-13063

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

In the conventional semiconductor device disclosed in Patent Document 1mentioned above, since the barrier metal layer 1004 is so configuredthat its peripheral part 1004 a rests on the part of the protectionlayer 1003 overlapping the electrode pad portion 1002,disadvantageously, as shown in FIGS. 30 and 31, when a thermal stressascribable to a difference in thermal expansion coefficient between thesemiconductor substrate 1001 and the printed circuit board 1006 acts onthe bump electrode 1005, a crack is prone to develop in a region of theprotection layer 1003 under (a region thereof corresponding to) thecircumferential end part 1004 b of the barrier metal layer 1004. Thismakes the protection layer 1003 prone to breakage, leading to theinconvenience that when the protection layer 1003 breaks, the breakagelowers the reliability of the semiconductor device.

The present invention has been made to solve problems as discussedabove, and an object of the invention is to provide a semiconductordevice that can suppress a lowering in reliability.

Means for Solving the Problem

To achieve the above object, according to a first aspect of theinvention, a semiconductor device is provided with: an electrode padportion formed on a face of a substrate; a first protection layerincluding a first opening through which a top face of the electrode padportion is exposed, the first protection layer being formed on the faceof the substrate to overlap part of the electrode pad portion; a barriermetal layer formed on the electrode pad portion; and a bump electrodeformed on the barrier metal layer. Here, the barrier metal layer has acircumferential end part thereof formed inward of the first opening inthe first protection layer as seen in a plan view.

In this semiconductor device according to the first aspect, as describedabove, the barrier metal layer is so configured that its circumferentialend part is formed inward of the first opening in the first protectionlayer as seen in a plan view, and consequently no first protection layeris formed under the circumferential end part of the barrier metal layer.Thus, during the flip chip bonding of the substrate onto the printedcircuit board, even when a thermal stress ascribable to a difference inthermal expansion coefficient between the substrate and the printedcircuit board acts on the bump electrode, it is possible to suppressdevelopment of a crack in the first protection layer. Thus, it ispossible to suppress breakage of the first protection layer, and it isthereby possible to suppress a lowering in the reliability of thesemiconductor device resulting from breakage of the first protectionlayer.

In the above-described semiconductor device according to the firstaspect, preferably, there is additionally provided: a second protectionlayer formed to cover a predetermined region on the first protectionlayer and a predetermined region on the electrode pad portion. Here, thebarrier metal layer is formed on the electrode pad portion with aperipheral part of the barrier metal layer located over the secondprotection layer. With this configuration, it is possible to form easilythe barrier metal layer such that its circumferential end part islocated inward of the first opening in the first protection layer asseen in a plan view.

In this case, preferably, in the second protection layer, a secondopening is formed through which the top face of the electrode padportion is exposed and that has an opening width smaller than the firstopening, and a rim part of the second protection layer defining thesecond opening has an inclined shape. With this configuration, even whenthe peripheral part of the barrier metal layer is formed over the secondprotection layer, it is possible to suppress breakage of the barriermetal layer. Thus, it is possible to suppress a lowering in thereliability of the semiconductor device resulting from breakage of thefirst protection layer, and in addition it is possible to suppress alowering in the reliability of the semiconductor device resulting frombreakage of the barrier metal layer. It is thus possible to suppressmore easily a lowering in the reliability of the semiconductor device.

In the above-described configuration in which the second protectionlayer is formed, preferably, the second protection layer is formed ofpolyimide. With this configuration, it is possible to suppress breakageof the first protection layer more easily.

In the above-described semiconductor device according to the firstaspect, the electrode pad portion may be formed of a material containingaluminum, the barrier metal layer may be formed of a material containingtitanium, and the bump electrode may comprise a solder bump.

According to a second aspect of the invention, a semiconductor device isprovided with: an electrode pad portion formed on a face of a substrate;a first protection layer including a first opening through which a topface of the electrode pad portion is exposed, the first protection layerbeing formed on the face of the substrate to overlap part of theelectrode pad portion; a barrier metal layer formed on the electrode padportion so as not to make direct contact with the first protectionlayer; and a bump electrode formed on the barrier metal layer. Here, thefirst protection layer has a step part formed in it as a result of thefirst protection layer overlapping the part of the electrode padportion, and the barrier metal layer has a circumferential end partthereof formed outward of the step part as seen in a plan view.

In this semiconductor device according to the second aspect, asdescribed above, the barrier metal layer is formed on the electrode padportion so as not to make direct contact with first protection layer.Thus, during the flip chip bonding of the substrate onto the printedcircuit board, even when a thermal stress ascribable to a difference inthermal expansion coefficient between the substrate and the printedcircuit board acts on the solder bump, it is possible to suppress thethermal stress acting on the first protection layer, and thus it ispossible to suppress development of a crack in the first protectionlayer. Thus, it is possible to suppress breakage of the first protectionlayer, and it is thereby possible to suppress a lowering in thereliability of the semiconductor device resulting from breakage of thefirst protection layer.

Moreover, according to the second aspect, the barrier metal layer is soconfigured that its circumferential end part is formed outward of thestep part as seen in a plan view, and this permits the barrier metallayer to be configured such that the step part is not located rightunder the circumferential end part. Here, in the step part of the firstprotection layer, because the first protection layer is partly lessthick and for other reasons, a crack is more likely to develop than inthe other part of the first protection layer; on the other hand,however, thanks to the configuration described above, even when athermal stress ascribable to a difference in thermal expansioncoefficient between the substrate and the printed circuit board acts onthe solder bump, it is possible to suppress development of a crack inthe step part of the first protection layer. This, too, contributes tosuppressing a lowering in the reliability of the semiconductor deviceresulting from breakage of the first protection layer.

In this case, preferably, there is additionally provided: a secondprotection layer formed to cover a predetermined region on the firstprotection layer and a predetermined region on the electrode padportion. Here, the barrier metal layer is formed on the electrode padportion with a peripheral part of the barrier metal layer located overthe second protection layer. With this configuration, when the barriermetal layer is formed on the electrode pad portion, it is possible toform easily the barrier metal layer such that it does not make directcontact with the first protection layer and that its circumferential endpart is located outward of the step part as seen in a plan view.

In this case, preferably, in the second protection layer, a secondopening is formed through which the top face of the electrode padportion is exposed and that has an opening width smaller than the firstopening, and a rim part of the second protection layer defining thesecond opening has an inclined shape. With this configuration, even whenthe peripheral part of the barrier metal layer is formed over the secondprotection layer, it is possible to suppress breakage of the barriermetal layer. Thus, it is possible to suppress a lowering in thereliability of the semiconductor device resulting from breakage of thefirst protection layer, and in addition it is possible to suppress alowering in the reliability of the semiconductor device resulting frombreakage of the barrier metal layer. It is thus possible to suppressmore easily a lowering in the reliability of the semiconductor device.

In the above-described configuration in which the second protectionlayer is formed, preferably, the second protection layer is formed ofpolyimide. With this configuration, it is possible to suppress breakageof the first protection layer more easily.

In the above-described semiconductor device according to the secondaspect, the electrode pad portion may be formed of a material containingaluminum, the barrier metal layer may be formed of a material containingtitanium, and the bump electrode may comprise a solder bump.

Advantages of the Invention

As described above, according to the present invention, it is possibleto obtain easily a semiconductor device that can suppress a lowering inreliability.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 A sectional view showing the structure of a semiconductor deviceaccording to a first embodiment of the invention.

FIG. 2 A sectional view showing the structure of an electrode portion ofthe semiconductor chip in the semiconductor device shown in FIG. 1according to the first embodiment of the invention.

FIG. 3 A sectional view showing the structure of an electrode portion ofthe semiconductor chip, with a solder bump omitted, in the semiconductordevice shown in FIG. 1 according to the first embodiment of theinvention.

FIG. 4 A plan view showing the structure of an electrode portion of thesemiconductor chip, with the solder bump omitted, in the semiconductordevice shown in FIG. 1 according to the first embodiment of theinvention.

FIG. 5 A sectional view showing the semiconductor chip mounted on aprinted circuit board.

FIG. 6 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 7 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 8 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 9 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 10 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 11 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 12 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 13 A sectional view showing the structure of an electrode portionof the semiconductor chip according to a first modified example of thefirst embodiment.

FIG. 14 A sectional view showing the structure of an electrode portionof the semiconductor chip according to a second modified example of thefirst embodiment.

FIG. 15 A sectional view showing the structure of an electrode portionof the semiconductor chip according to a third modified example of thefirst embodiment.

FIG. 16 A sectional view showing the structure of a semiconductor deviceaccording to a second embodiment of the invention.

FIG. 17 A sectional view showing the structure of an electrode portionof the semiconductor chip in the semiconductor device shown in FIG. 16according to the second embodiment of the invention.

FIG. 18 A sectional view showing the structure of an electrode portionof the semiconductor chip, with a solder bump omitted, in thesemiconductor device shown in FIG. 16 according to the second embodimentof the invention.

FIG. 19 A plan view showing the structure of an electrode portion of thesemiconductor chip, with the solder bump omitted, in the semiconductordevice shown in FIG. 16 according to the second embodiment of theinvention.

FIG. 20 A sectional view showing the semiconductor chip mounted on aprinted circuit board.

FIG. 21 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 22 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 23 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 24 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 25 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 26 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 27 A sectional view illustrating the process for forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the second embodiment of the invention.

FIG. 28 A sectional view showing the structure of an electrode portionof the semiconductor chip according to a modified example of the secondembodiment.

FIG. 29 A schematic sectional view showing the structure of aconventional semiconductor device disclosed in Patent Document 1.

FIG. 30 A schematic sectional view showing the structure of aconventional semiconductor device disclosed in Patent Document 1.

FIG. 31 An enlarged sectional view of part A in FIG. 30.

LIST OF REFERENCE SYMBOLS

-   1, 401 semiconductor substrate (substrate)-   2, 402 electrode pad portion-   3, 403 passivation layer (first protection layer)-   3 a, 403 a first opening-   3 b, 403 b step part-   4, 404 insulating protection layer (second protection layer)-   4 a, 404 a second opening-   4 b, 404 b rim part-   5, 405 barrier metal layer-   5 a, 405 a peripheral part-   5 b, 405 b circumferential end part-   6, 406 solder bump (bump electrode)-   10, 110, 210,-   310, 410, 510 semiconductor chip-   20, 420 printed circuit board-   21, 421 connection pad portion-   22, 422 electrode terminal-   30, 430 resin sealing layer-   40, 440 resin member

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, as specific examples of how the present invention iscarried out, embodiments of the invention will be described withreference to the accompanying drawings. The embodiments presented belowdeal with examples in which the invention is applied to a semiconductordevice with a BGA (ball grid array) package in which a semiconductorchip is bonded by flip chip bonding.

First Embodiment

FIG. 1 is a sectional view showing the structure of a semiconductordevice according to a first embodiment of the invention. FIG. 2 is asectional view showing the structure of an electrode portion of asemiconductor chip in the semiconductor device shown in FIG. 1 accordingto the first embodiment of the invention. FIGS. 3 to 5 are diagramsillustrating the structure of the semiconductor device according to thefirst embodiment of the invention. First, with reference to FIGS. 1 to5, the structure of the semiconductor device according to the firstembodiment of the invention will be described.

As shown in FIG. 1, the semiconductor device according to the firstembodiment is provided with a semiconductor chip 10, a printed circuitboard 20 on which the semiconductor chip 10 is mounted, and a resinsealing layer 30 that seals the semiconductor chip 10 in. The resinsealing layer 30 is formed of a thermosetting resin such as epoxy resin.

The semiconductor chip 10 comprises a semiconductor substrate 1 such asa silicon substrate, and on the top face of the semiconductor substrate1, a circuit (unillustrated) such as an IC or LSI has been fabricated.It should be understood that the semiconductor substrate 1 is an exampleof a “substrate” according to the invention.

Moreover, as shown in FIGS. 2 and 3, on the top face of thesemiconductor substrate 1, an electrode pad portion 2 of aluminum or analloy of aluminum is formed. Moreover, on the top face of thesemiconductor substrate 1, a passivation layer 3 of silicon nitride isformed. In the passivation layer 3, a first opening 3 a is formedthrough which a predetermined region of the electrode pad portion 2 isexposed. As shown in FIG. 4, the first opening 3 a has a substantiallycircular shape as seen in a plan view, and is formed with an openingwidth D1 of about 85 μm to about 95 μm. Moreover, the passivation layer3 is formed on the top face of the semiconductor substrate 1 so as tooverlap a peripheral part of the electrode pad portion 2. It should beunderstood that the passivation layer 3 is an example of a “firstprotection layer” according to the invention.

Moreover, over a predetermined region on the passivation layer 3 and apredetermined region on the electrode pad portion 2, an insulatingprotection layer 4 of polyimide is formed. As shown in FIGS. 3 and 4, inthe insulating protection layer 4, a second opening 4 a is provided thathas an opening width D2 (about 55 μm to about 65 μm) smaller than theopening width D1 (about 85 μm to about 95 μm) of the first opening 3 ain the passivation layer 3. As shown in FIG. 4, the second opening 4 ahas a substantially circular shape as seen in a plan view, and is formedto be substantially concentric with the first opening 3 a. Moreover, arim part 4 b of the insulating protection layer 4 defining the secondopening 4 a is formed in an inclined shape. It should be understood thatthe insulating protection layer 4 is an example of a “second protectionlayer” according to the invention.

Moreover, as shown in FIGS. 2 and 3, on the electrode pad portion 2, abarrier metal layer 5 with a thickness of about 10 μm and of titanium(Ti) is formed, with a peripheral part 5 a of the barrier metal layer 5located in a region on the insulating protection layer 4 near the rimpart 4 b. As shown in FIG. 4, the barrier metal layer 5 has asubstantially circular shape as seen in a plan view, and is formed to besubstantially concentric with the first opening 3 a and with the secondopening 4 a.

Here, in the first embodiment, the barrier metal layer 5 is so formedthat a circumferential end part 5 b of the barrier metal layer 5 islocated inward of the first opening 3 a in the passivation layer 3 asseen in a plan view. That is, as shown in FIG. 3 or 4, the barrier metallayer 5 is configured with a width D3 (about 70 μm to about 80 μm)smaller than the width D1 of the first opening 3 a in the passivationlayer 3.

Moreover, as shown in FIG. 2, on the barrier metal layer 5, a solderbump 6 with a height (thickness) of about 70 μm to about 100 μm and of aspherical shape is formed. The solder bump 6 is electrically connected,via the barrier metal layer 5, to the electrode pad portion 2. Moreover,the solder bump 6 is formed on the barrier metal layer 5 such that thesolder bump 6 makes contact not only with the top face of the barriermetal layer 5 but also with the circumferential end part 5 b of thebarrier metal layer 5. That is, the solder bump 6 is bonded to thebarrier metal layer 5 so as to cover the circumferential end part 5 b ofthe barrier metal layer 5. This results in a larger bonding area than ina case where the solder bump 6 is bonded only to the top face, and thuscontributes to increased bonding strength between the solder bump 6 andthe barrier metal layer 5. It should be understood that the solder bump6 is an example of a “bump electrode” according to the invention.

The printed circuit board 20 shown in FIG. 1 is formed of glass epoxyresin or the like, and has conductor layers (unillustrated) in amultiple-layer structure. On the top face of the printed circuit board20, a plurality of connection pad portions 21 (see FIG. 5) are formedfor electrical connection with solder bumps 6 on the semiconductor chip10. On the bottom face of the printed circuit board 20, a plurality ofelectrode terminals 22 are formed that are electrically connected to theconnection pad portions 21. The electrode terminals 22 are solder bumps6 of a spherical shape, and are arrayed in a lattice-like pattern on thebottom face of the printed circuit board 20.

As shown in FIGS. 1 and 5, the semiconductor chip 10 having the solderbumps 6 formed on it is mounted face down on the printed circuit board20. Specifically, as shown in FIG. 5, the semiconductor chip 10 isarranged with its top face (circuit face) facing the printed circuitboard 20, and the solder bumps 6 on the semiconductor chip 10 are bondedto the connection pad portions 21 on the printed circuit board 20 byflip chip bonding. This electrically connects the solder bumps 6 and theconnection pad portions 21 together.

As shown in FIG. 1, the gap between the semiconductor chip 10 and theprinted circuit board 20 is filled with a resin member 40 of siliconeresin, epoxy resin, acrylic resin, or the like.

In the first embodiment, as described above, the barrier metal layer 5is so configured that its circumferential end part 5 b is formed inwardof the first opening 3 a in the passivation layer 3 as seen in a planview, and consequently no passivation layer 3 is formed under thecircumferential end part 5 b of the barrier metal layer 5. Thus, duringthe flip chip bonding of the semiconductor chip 10 (semiconductorsubstrate 1) onto the printed circuit board 20, even when a thermalstress ascribable to a difference in thermal expansion coefficientbetween the semiconductor chip 10 and the printed circuit board 20 actson the solder bump 6, it is possible to suppress development of a crackin the passivation layer 3. Thus, it is possible to suppress breakage ofthe passivation layer 3, and it is thereby possible to suppress alowering in the reliability of the semiconductor device resulting frombreakage of the passivation layer 3.

Under the circumferential end part 5 b of the barrier metal layer 5, theinsulating protection layer 4 is formed. Since the insulating protectionlayer 4 is formed of polyimide, which is softer than silicon nitride, ofwhich the passivation layer 3 is formed, even when the peripheral part 5a of the barrier metal layer 5 is formed over the insulating protectionlayer 4, it is possible to suppress breakage of the insulatingprotection layer 4.

Moreover, in the first embodiment, the insulating protection layer 4 isformed over a predetermined region on the passivation layer 3 and apredetermined region on the electrode pad portion 2, and the barriermetal layer 5 is formed on the electrode pad portion 2 with theperipheral part 5 a located over the insulating protection layer 4.Consequently, in the process, described later, of forming an electrodeportion, it is possible to form easily the barrier metal layer 5 suchthat its circumferential end part 5 b is located inward of the firstopening 3 a in the passivation layer 3 as seen in a plan view.

Moreover, in the first embodiment, the rim part 4 b of the insulatingprotection layer 4 defining the second opening 4 a is formed in aninclined shape, and consequently even when the peripheral part 5 a ofthe barrier metal layer 5 is formed over the insulating protection layer4, it is possible to make the barrier metal layer 5 unlikely to break.Thus, it is possible to suppress a lowering in the reliability of thesemiconductor device resulting from breakage of the passivation layer 3,and in addition it is possible to suppress a lowering in the reliabilityof the semiconductor device resulting from breakage of the barrier metallayer 5. It is thus possible to suppress more easily a lowering in thereliability of the semiconductor device.

FIGS. 6 to 12 are sectional views illustrating the process of forming anelectrode portion of the semiconductor chip in the semiconductor deviceaccording to the first embodiment. Next, with reference to FIGS. 1 to 4and 6 to 12, the process of forming an electrode portion of thesemiconductor chip 10 will be described.

First, as shown in FIG. 6, over the entire surface of the top face of asemiconductor substrate 1 having an electrode pad portion 2 formed onit, a passivation layer 3 of silicon nitride is formed by plasma CVD orthe like. Next, as shown in FIG. 7, a resist 50 is formed in apredetermined region on the passivation layer 3 by photolithography orthe like. Then, with the resist 50 used as a mask, a predeterminedregion of the passivation layer 3 is removed by etching. This forms afirst opening 3 a in the passivation layer 3 through which apredetermined region on the electrode pad portion 2 is exposed. Here,the first opening 3 a is formed with an opening width D1 (about 85 μm toabout 95 μm, see FIGS. 3 and 4). The resist 50 is then removed.

Subsequently, as shown in FIG. 8, over the entire surface, an insulatingprotection layer 14 of polyimide is formed by spin coating or the like.Then, a predetermined region of the insulating protection layer 14 isremoved by photolithography and etching. Thereafter, the insulatingprotection layer 14 is flowed by heat processing. Thus, an insulatingprotection layer 4 as shown in FIG. 9 is obtained. Specifically, in theinsulating protection layer 14 (see FIG. 8), a second opening 4 a withan opening width D2 (about 55 μm to about 65 μm) smaller than theopening width D1 (about 85 μm to about 95 μm) of the first opening 3 ain the passivation layer 3 is formed, and a rim part 4 b defining thesecond opening 4 a is formed in an inclined shape.

Next, as shown in FIG. 10, over the entire surface, a barrier metallayer 15 with a thickness of about 10 μm and of titanium (Ti) is formedby vapor deposition or the like. Next, as shown in FIG. 11, a resist 60is formed in a predetermined region on the barrier metal layer 15 byphotolithography and etching. Here, the resist 60 is so patterned thatit has an opening in a region corresponding to the inside of the firstopening 3 a in the passivation layer 3. Then, with the resist 60 used asa mask, a solder layer 16 is formed on the barrier metal layer 15 byplating or the like.

Thereafter, as shown in FIG. 12, the resist 60 (see FIG. 11) is removed,and the barrier metal layer 15 around the solder layer 16 is removed byetching. Thus, a barrier metal layer 5 of which a circumferential endpart 5 b is formed inward of the first opening 3 a in the passivationlayer 3 as seen in a plan view as shown in FIG. 4 is formed on theelectrode pad portion 2. Moreover, as shown in FIGS. 2 and 3, thebarrier metal layer 5 formed on the electrode pad portion 2 is soconfigured that its peripheral part 5 a is located over the insulatingprotection layer 4.

It should be noted that, as shown in FIG. 12, forming the insulatingprotection layer 4 described above makes it possible to obtain aconfiguration in which the top face of the electrode pad portion 2 isnot exposed. Thus, even when the barrier metal layer 15 is so etchedthat the circumferential end part 5 b is formed inward of the firstopening 3 a in the passivation layer 3, it is possible to prevent theetching from progressing to the electrode pad portion 2. Thus, it ispossible to form easily the barrier metal layer 5 such that itscircumferential end part 5 b is located inward of the first opening 3 ain the passivation layer 3 as seen in a plan view.

Lastly, by heating in a reflow furnace, the solder layer 16 is meltedfor a while so as to be formed into a spherical solder bump 6 as shownin FIG. 2. This forms the solder bump 6 (see FIG. 2) on the barriermetal layer 5. In this way, the electrode portion of the semiconductorchip 10 in the semiconductor device according to the first embodiment ofthe invention is formed.

Although the first embodiment described above deals with an example inwhich an insulating protection layer of polyimide is provided, this isnot meant to limit the invention; it is instead possible to adopt aconfiguration provided with no insulating protection layer as in asemiconductor chip 110, shown in FIG. 13, according to a first modifiedexample of the first embodiment. In this case, instead of an insulatingprotection layer of polyimide, a resist is used to form an electrodestructure similar to that in the above-described embodiment, andthereafter the resist is removed to obtain a configuration with noinsulating protection layer. Also in a case where the resist is removedby filling the gap between the semiconductor chip 110 and the printedcircuit board with a resin member 40 as shown in FIG. 1, it is possibleto suppress a lowering in the reliability of flip chip bonding.

Instead, as in a semiconductor chip 210, shown in FIG. 14, according toa second modified example of the first embodiment, it is also possibleto form a barrier metal layer 205 over the entire surface of the regionon the electrode pad portion 2 exposed through the first opening 3 a inthe passivation layer 3. In this case, by giving the barrier metal layer205 a thickness greater than that of the passivation layer 3, it ispossible to form the solder bump 6 such that it covers thecircumferential end part 205 a of the barrier metal layer 205.

Instead, as in a semiconductor chip 310, shown in FIG. 15, according toa third modified example of the invention, it is also possible to formthe circumferential end part 305 a of the barrier metal layer 305 in aregion a predetermined distance away from the first opening 3 a in thepassivation layer 3.

Second Embodiment

FIG. 16 is a sectional view showing the structure of a semiconductordevice according to a second embodiment of the invention. FIG. 17 is asectional view showing the structure of an electrode portion of asemiconductor chip in the semiconductor device shown in FIG. 16according to the second embodiment of the invention. FIGS. 18 to 20 arediagrams illustrating the structure of the semiconductor deviceaccording to the second embodiment of the invention. First, withreference to FIGS. 16 to 20, the structure of the semiconductor deviceaccording to the second embodiment of the invention will be described.

As shown in FIG. 16, the semiconductor device according to the secondembodiment is provided with a semiconductor chip 410, a printed circuitboard 420 on which the semiconductor chip 410 is mounted, and a resinsealing layer 430 that seals the semiconductor chip 410 in. The resinsealing layer 430 is formed of a thermosetting resin such as epoxyresin.

The semiconductor chip 410 comprises a semiconductor substrate 401 suchas a silicon substrate, and on the top face of the semiconductorsubstrate 401, a circuit (unillustrated) such as an IC or LSI has beenfabricated. It should be understood that the semiconductor substrate 401is an example of a “substrate” according to the invention.

Moreover, as shown in FIGS. 17 and 18, on the top face of thesemiconductor substrate 401, an electrode pad portion 402 of aluminum oran alloy of aluminum is formed. As shown in FIG. 19, the electrode padportion 402 here is formed in a rectangular shape as seen in a planview. Moreover, as shown in FIGS. 17 and 18, on the top face of thesemiconductor substrate 401, a passivation layer 403 of silicon nitrideis formed. In the passivation layer 403, a first opening 403 a is formedthrough which a predetermined region of the electrode pad portion 402 isexposed. As shown in FIG. 19, the first opening 403 a has asubstantially circular shape as seen in a plan view, and is formed withan opening width D1 of about 85 μm to about 95 μm. Moreover, thepassivation layer 403 is formed on the top face of the semiconductorsubstrate 401 so as to overlap a peripheral part of the electrode padportion 402. Thus, the passivation layer 403 has a step part 403 bformed in it. It should be understood that the passivation layer 403 isan example of a “first protection layer” according to the invention.

Over a predetermined region on the passivation layer 403 and apredetermined region on the electrode pad portion 402, an insulatingprotection layer 404 of polyimide is formed. As shown in FIGS. 18 and19, in the insulating protection layer 404, a second opening 404 a isprovided that has an opening width D2 (about 55 μm to about 65 μm)smaller than the opening width D1 (about 85 μm to about 95 μm) of thefirst opening 403 a in the passivation layer 403. As shown in FIG. 19,the second opening 404 a has a substantially circular shape as seen in aplan view, and is formed to be substantially concentric with the firstopening 403 a. Moreover, a rim part 404 b of the insulating protectionlayer 404 defining the second opening 404 a is formed in an inclinedshape. It should be understood that the insulating protection layer 404is an example of a “second protection layer” according to the invention.

Moreover, as shown in FIGS. 17 and 18, on the electrode pad portion 402,a barrier metal layer 405 with a thickness of about 10 μm and oftitanium (Ti) is formed, with a peripheral part 405 a of the barriermetal layer 405 located in a region on the insulating protection layer404 near the rim part 404 b. That is, the barrier metal layer 405 isformed on the electrode pad portion 402 without making direct contactwith the passivation layer 403. As shown in FIG. 19, the barrier metallayer 405 has a substantially circular shape as seen in a plan view, andis formed to be substantially concentric with the first opening 403 aand with the second opening 404 a.

Here, in the second embodiment, the barrier metal layer 405 is so formedthat a circumferential end part 405 b of the barrier metal layer 405 islocated outward of the step part 403 b of the passivation layer 403 asseen in a plan view. That is, the barrier metal layer 405 is formed witha width D4 (about 110 μm to about 120 μm) large enough to cover the steppart 403 b of the passivation layer 403.

Moreover, as shown in FIG. 17, on the barrier metal layer 405, a solderbump 406 with a height (thickness) of about 70 μm to about 100 μm and ofa spherical shape is formed. The solder bump 406 is electricallyconnected, via the barrier metal layer 405, to the electrode pad portion402. Moreover, the solder bump 406 is formed on the barrier metal layer405 such that the solder bump 6 makes contact not only with the top faceof the barrier metal layer 405 but also with the circumferential endpart 405 b of the barrier metal layer 405. That is, the solder bump 406is bonded to the barrier metal layer 405 so as to cover thecircumferential end part 405 b of the barrier metal layer 405. Thisresults in a larger bonding area than in a case where the solder bump406 is bonded only to the top face, and thus contributes to increasedbonding strength between the solder bump 406 and the barrier metal layer405. It should be understood that the solder bump 406 is an example of a“bump electrode” according to the invention.

The printed circuit board 420 shown in FIG. 16 is formed of glass epoxyresin or the like, and has conductor layers (unillustrated) in amultiple-layer structure. On the top face of the printed circuit board420, a plurality of connection pad portions 421 (see FIG. 20) are formedfor electrical connection with solder bumps 406 on the semiconductorchip 410. On the bottom face of the printed circuit board 420, aplurality of electrode terminals 422 are formed that are electricallyconnected to the connection pad portions 421. The electrode terminals422 are solder bumps 406 of a spherical shape, and are arrayed in alattice-like pattern on the bottom face of the printed circuit board420.

As shown in FIGS. 16 and 20, the semiconductor chip 410 having thesolder bumps 406 formed on it is mounted face down on the printedcircuit board 420. Specifically, as shown in FIG. 20, the semiconductorchip 410 is arranged with its top face (circuit face) facing the printedcircuit board 420, and the solder bumps 406 on the semiconductor chip410 are bonded to the connection pad portions 421 on the printed circuitboard 420 by flip chip bonding. This electrically connects the solderbumps 406 and the connection pad portions 421 together.

As shown in FIG. 16, the gap between the semiconductor chip 410 and theprinted circuit board 420 is filled with a resin member 440 of siliconeresin, epoxy resin, acrylic resin, or the like.

In the second embodiment, as described above, the barrier metal layer405 is formed on the electrode pad portion 402 so as not to make directcontact with the passivation layer 403. Thus, during the flip chipbonding of the semiconductor chip 410 (semiconductor substrate 401) ontothe printed circuit board 420, even when a thermal stress ascribable toa difference in thermal expansion coefficient between the semiconductorchip 410 and the printed circuit board 420 acts on the solder bump 406,it is possible to suppress the thermal stress acting on the passivationlayer 403, and thus it is possible to suppress development of a crack inthe passivation layer 403. Thus, it is possible to suppress breakage ofthe passivation layer 403, and it is thereby possible to suppress alowering in the reliability of the semiconductor device resulting frombreakage of the passivation layer 403.

Moreover, in the second embodiment, the barrier metal layer 405 is soconfigured that its circumferential end part 405 b is formed outward ofthe step part 403 b as seen in a plan view, and this permits the barriermetal layer 405 to be configured such that the step part 403 b is notlocated right under the circumferential end part 405 b. Here, in thestep part 403 b of the passivation layer 403, because the passivationlayer 403 is partly less thick and for other reasons, a crack is morelikely to develop than in the other part of the passivation layer 403;on the other hand, however, thanks to the configuration described above,even when a thermal stress ascribable to a difference in thermalexpansion coefficient between the semiconductor chip 410 (semiconductorsubstrate 401) and the printed circuit board 420 acts on the solder bump406, it is possible to suppress development of a crack in the step part403 b of the passivation layer 403. This, too, contributes tosuppressing a lowering in the reliability of the semiconductor deviceresulting from breakage of the passivation layer 403.

Moreover, in the second embodiment, the insulating protection layer 404is formed over a predetermined region on the passivation layer 403 and apredetermined region on the electrode pad portion 402, and the barriermetal layer 405 is formed on the electrode pad portion 402 with theperipheral part 405 a located over the insulating protection layer 404.Consequently, when the barrier metal layer 405 is formed on theelectrode pad portion 402, it is possible to form easily the barriermetal layer 405 such that it does not make direct contact with thepassivation layer 403 and that its circumferential end part 405 b islocated outward of the step part 403 b as seen in a plan view.

Moreover, in the second embodiment, the rim part 404 b of the insulatingprotection layer 404 defining the second opening 404 a is formed in aninclined shape, and consequently even when the peripheral part 405 a ofthe barrier metal layer 405 is formed over the insulating protectionlayer 404, it is possible to make the barrier metal layer 405 unlikelyto break. Thus, it is possible to suppress a lowering in the reliabilityof the semiconductor device resulting from breakage of the passivationlayer 403, and in addition it is possible to suppress a lowering in thereliability of the semiconductor device resulting from breakage of thebarrier metal layer 405. It is thus possible to suppress more easily alowering in the reliability of the semiconductor device.

FIGS. 21 to 27 are sectional views illustrating the process of formingan electrode portion of the semiconductor chip in the semiconductordevice according to the second embodiment. Next, with reference to FIGS.16 to 4 and 21 to 27, the process of forming an electrode portion of thesemiconductor chip 410 will be described.

First, as shown in FIG. 21, over the entire surface of the top face of asemiconductor substrate 401 having an electrode pad portion 402 formedon it, a passivation layer 403 of silicon nitride is formed by plasmaCVD or the like. Next, as shown in FIG. 22, a resist 450 is formed in apredetermined region on the passivation layer 403 by photolithography orthe like. Then, with the resist 450 used as a mask, a predeterminedregion of the passivation layer 403 is removed by etching. This forms afirst opening 403 a in the passivation layer 403 through which apredetermined region on the electrode pad portion 402 is exposed. Here,the first opening 403 a is formed with an opening width D1 (about 85 μmto about 95 μm, see FIGS. 18 and 19). The resist 450 is then removed.

Subsequently, as shown in FIG. 23, over the entire surface, aninsulating protection layer 414 of polyimide is formed by spin coatingor the like. Then, a predetermined region of the insulating protectionlayer 414 is removed by photolithography and etching. Thereafter, theinsulating protection layer 414 is flowed by heat processing. Thus, aninsulating protection layer 404 as shown in FIG. 24 is obtained.Specifically, in the insulating protection layer 414 (see FIG. 23), asecond opening 404 a with an opening width D2 (about 55 μm to about 65μm) smaller than the opening width D1 (about 85 μm to about 95 μm) ofthe first opening 403 a in the passivation layer 403 is formed, and arim part 404 b defining the second opening 404 a is formed in aninclined shape.

Next, as shown in FIG. 25, over the entire surface, a barrier metallayer 415 with a thickness of about 10 μm and of titanium (Ti) is formedby vapor deposition or the like. Next, as shown in FIG. 26, a resist 460is formed in a predetermined region on the barrier metal layer 415 byphotolithography and etching. Then, with the resist 460 used as a mask,a solder layer 416 is formed on the barrier metal layer 415 by platingor the like.

Thereafter, as shown in FIG. 27, the resist 460 (see FIG. 26) isremoved, and the barrier metal layer 415 around the solder layer 416 isremoved by etching. Thus, a barrier metal layer 405 of which acircumferential end part 405 b is formed outward of the step part 403 bof the passivation layer 403 as seen in a plan view as shown in FIG. 19is formed on the electrode pad portion 402. Moreover, as shown in FIGS.17 and 18, the barrier metal layer 405 formed on the electrode padportion 402 is so configured that its peripheral part 405 a is locatedover the insulating protection layer 404.

It should be noted that, as shown in FIG. 27, forming the insulatingprotection layer 404 described above permits the barrier metal layer 405to be formed on the electrode pad portion 402 without making directcontact with the passivation layer 403.

Lastly, by heating in a reflow furnace, the solder layer 416 is meltedfor a while so as to be formed into a spherical solder bump 406 as shownin FIG. 17. This forms the solder bump 406 (see FIG. 17) on the barriermetal layer 405. In this way, the electrode portion of the semiconductorchip 410 in the semiconductor device according to the second embodimentof the invention is formed.

Although the second embodiment described above deals with an example inwhich an insulating protection layer of polyimide is provided, this isnot meant to limit the invention; it is instead possible to adopt aconfiguration provided with no insulating protection layer as in asemiconductor chip 510, shown in FIG. 28, according to a modifiedexample of the second embodiment. In this case, instead of an insulatingprotection layer of polyimide, a resist is used to form an electrodestructure similar to that in the above-described embodiment, andthereafter the resist is removed to obtain a configuration with noinsulating protection layer. Also in a case where the resist is removedby filling the gap between the semiconductor chip and the printedcircuit board with a resin member 440 as shown in FIG. 16, it ispossible to suppress a lowering in the reliability of flip chip bonding.

It should be understood that all the embodiments disclosed herein are inevery aspect meant to be illustrative and not restrictive. The scope ofthe invention is defined not by the description of the embodimentspresented above but by what is recited in the appended claims, andencompasses any modifications and variations made in a spirit and scopeequivalent to those of the appended claims.

For example, although the first and second embodiments described abovedeal with examples in which the invention is applied to a semiconductordevice with a BGA package, this is not meant to limit the invention; theinvention may be applied to a semiconductor device other than with a BGApackage.

For another example, although the first and second embodiments describedabove deal with examples in which an insulating protection layer isformed of polyimide, this is not meant to limit the invention; theinsulating protection layer may be formed of any organic material otherthan polyimide, for example BCB (benzocyclobutene) or fluororesin.

For another example, although the first and second embodiments describedabove deal with examples in which a passivation layer is formed ofsilicon nitride, this is not meant to limit the invention; thepassivation layer may be formed of any inorganic material other thansilicon nitride. For example, the passivation layer may be formed ofSiON, SiO₂, or the like.

For another example, although the first and second embodiments describedabove deal with examples in which an electrode pad portion is formed ofaluminum or an alloy of aluminum, this is not meant to limit theinvention; the electrode pad portion may be formed of any metal materialother than aluminum or an alloy of aluminum, for example gold (Au) or anAlCu alloy.

For another example, although the first and second embodiments describedabove deal with examples in which a barrier metal layer is formed oftitanium, this is not meant to limit the invention; the barrier metallayer may be formed of any material other than titanium. Materials otherthan titanium include, for example, TiN and Ta. The barrier metal layermay be given a multiple-layered structure having a plurality of metallayers stacked on one another

For another example, although the first and second embodiments describedabove deal with examples in which a bump electrode comprising a solderbump is formed on the electrode pad, this is not meant to limit theinvention; a bump electrode comprising a metal bump other than a solderbump (for example, an Au or Cu bump) may instead be formed on theelectrode pad.

For another example, although the first and second embodiments describedabove deal with examples in which the gap between the semiconductor chipand the printed circuit board is filled with a resin member, this is notmeant to limit the invention; the gap between the semiconductor chip andthe printed circuit board may be left unfilled with a resin member.

1.-10. (canceled)
 11. A semiconductor chip comprising: an electrode padportion formed on a face of a substrate; a first protection layerincluding a first opening through which a top face of the electrode padportion is exposed, the first protection layer disposed on the face ofthe substrate and overlapping part of the electrode pad portion; abarrier metal layer formed on the electrode pad portion; a bumpelectrode on the barrier metal layer; and a second protection layercovering a region on the first protection layer and a region on theelectrode pad portion, wherein the first protection layer has a steppart formed therein as a result of the first protection layeroverlapping the part of the electrode pad portion, wherein the barriermetal layer has a circumferential end part thereof formed outward of thefirst opening as seen in a plan view, wherein the bump electrode isbonded to the barrier metal layer, wherein the barrier metal layer is onthe electrode pad portion with a peripheral part of the barrier metallayer located over the second protection layer, wherein the secondprotection layer has a second opening through which the top face of theelectrode pad portion is exposed and that has an opening width smallerthan the first opening, and wherein a rim part of the second protectionlayer defining the second opening has an inclined shape, an uppersurface of the second protection layer has an arc surface along a lowersurface of the barrier metal layer, and a thickness between the arcsurface and the electrode pad portion as seen in a sectional view isgradually large from a rim part of the second opening to a rim part ofthe electrode pad portion, a rate of change of the thickness at the rimpart of the second opening being higher than a rate of change of thethickness at the rim part of the electrode pad portion.
 12. Thesemiconductor chip according to claim 11, wherein the barrier metallayer has a circumferential end part thereof formed outward of the steppart as seen in a plan view and extend upwardly along the secondprotection layer.
 13. The semiconductor chip according to claim 11,wherein a center of the barrier metal layer is lower than the rimportion of the barrier metal layer.
 14. The semiconductor chip accordingto claim 11, wherein the second protective layer intrude into a spacebetween the barrier metal layer and the first protective layer so thatthe second protective layer is interdigitate with the first protectionlayer.
 15. The semiconductor chip according to claim 11, the bumpelectrode is bonded to the barrier metal layer.
 16. The semiconductorchip according to claim 11, wherein the bump electrode has a portionwhich, as seen in a plan view, protrudes out from a side surface of thebarrier metal layer.
 17. The semiconductor chip according to claim 11,wherein the first opening has an opening width of about 85 μm to about95 mm, and wherein the second opening has an opening width of about 55μm to about 65 mm.
 18. The semiconductor chip according to claim 11,wherein the second protection layer is made of polyimide.
 19. Asemiconductor device comprising: the semiconductor chip according toclaim 11; and a printed circuit board on which the semiconductor chip ismounted to form an electric device.
 20. A semiconductor chip comprising:an electrode pad on a surface of a substrate; a first protection layerdisposed partially on the surface of the substrate and overlapping partof the electrode pad, the first protection layer having a first opening;a second protection layer covering a region on the first protectionlayer and a region on the electrode pad, the second protection layerhaving a second opening that has a width smaller than a width of thefirst opening; a barrier metal layer on the electrode pad, wherein aninterface between the barrier metal layer and the electrode pad islocated within the first opening and within the second opening, a bumpelectrode bonded to the barrier metal layer, and wherein a peripheralpart of the barrier metal layer is on the second protection layer; andwherein an upper surface of the second protection layer has an arcsurface in contact with a surface of the barrier metal layer, and athickness between the arc surface and the electrode pad portion as seenin a sectional view is gradually large from a rim part of the secondopening to a rim part of the electrode pad portion, a rate of change ofthe thickness at the rim part of the second opening being higher than arate of change of the thickness at the rim part of the electrode padportion, and wherein the upper surface and a lower surface of thebarrier metal layer has a curved shape extend along the secondprotective layer so that a center point of a curvature of the curvedshape as seen in a sectional view is located on a substrate side of thecurved shape.
 21. The semiconductor chip according to claim 20, whereinthe barrier metal layer has a circumferential end part thereof formedoutward of the step part as seen in a plan view and extend upwardlyalong the second protection layer.
 22. The semiconductor chip accordingto claim 20, wherein a center of the barrier metal layer is lower thanthe rim portion of the barrier metal layer.
 23. The semiconductor chipaccording to claim 20, wherein the second protective layer intrude intoa space between the barrier metal layer and the first protective layerso that the second protective layer is interdigitate with the firstprotection layer.
 24. The semiconductor chip according to claim 20, thebump electrode is disposed on the barrier metal layer.
 25. Thesemiconductor chip according to claim 20, wherein the bump electrode hasa portion which, as seen in a plan view, protrudes out from a sidesurface of the barrier metal layer.
 26. The semiconductor chip accordingto claim 20, wherein the first opening has an opening width of about 85μm to about 95 mm, and wherein the second opening has an opening widthof about 55 μm to about 65 mm.
 27. The semiconductor chip according toclaim 20, wherein the second protection layer is made of polyimide. 28.A semiconductor device comprising: the semiconductor chip according toclaim 20; and a printed circuit board on which the semiconductor chip ismounted to form an electric device.
 29. A semiconductor chip comprising:an electrode pad on a surface of a substrate; a first protection layerdisposed partially on the surface of the substrate and overlapping partof the electrode pad, the first protection layer having a first opening;a second protection layer covering a region on the first protectionlayer and a region on the electrode pad, the second protection layerhaving a second opening that has a width smaller than a width of thefirst opening; a barrier metal layer on the electrode pad, wherein aninterface between the barrier metal layer and the electrode pad islocated within the first opening and within the second opening, a bumpelectrode bonded to the barrier metal layer, and wherein a peripheralpart of the barrier metal layer is on the second protection layer; andwherein an upper surface of the second protection layer has an arcsurface in contact with a surface of the barrier metal layer, and athickness between the arc surface and the electrode pad portion as seenin a sectional view is gradually large from a rim part of the secondopening to a rim part of the electrode pad portion, a rate of change ofthe thickness at the rim part of the second opening being higher than arate of change of the thickness at the rim part of the electrode padportion, wherein the upper surface and a lower surface of the barriermetal layer has a curved shape extend along the second protective layerso that a center point of a curvature of the curved shape as seen in asectional view is located on a substrate side of the curved shape,wherein the barrier metal layer has a circumferential end part thereofformed outward of the step part as seen in a plan view and extendupwardly along the second protection layer, and wherein a center of thebarrier metal layer is lower than a rim portion of the barrier metallayer.
 30. The semiconductor chip according to claim 11, wherein atleast an entire part of the arc surface over the electrode pad portionis curved.
 31. The semiconductor chip according to claim 20, wherein atleast an entire part of the arc surface over the electrode pad portionis curved.
 32. The semiconductor chip according to claim 29, wherein atleast an entire part of the arc surface over the electrode pad portionis curved.